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THIN COMPOSITIONAL LAYERS IN SILICON
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF
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Research is reported in three major sections. Part I deals with diffusion, with emphasis on the techniques of preparation and the properties of thin diffused layers. The multiple predeposit technique improved uniformity. Box diffusion was found better than open-tube diffusion, with the platinum box superior to a quartz box. Simultaneous oxidation and diffusion of boron and phosphorus yielded higher diffusion constants than those, reported by others. Part II discusses the properties of junctions, especially imperfect junctions. Gettering techniques were developed to remove or prevent metal precipitates which caused excess reverse current below avalanche breakdown. A study of light emission from reverse biased p-n junctions revealed 2 types of microplasmas which may be related to certain crystal faults. A theroretical study analyzed the phenomena of secondary ionization, avalanche breakdown and microplasma phenomena in a simplified model. Part III reports on diffusion along grain boundaries. Silicon bicrystals were grown with one or more small angle grain boundaries. Diffusion of impurities parallel to the dislocations was found to be enhanced at grain boundaries. A new mathematical treatment of diffusion down dislocations is presented and on its basis the experimental results are discussed. Properties of p-n junctions at grain boundaries are related to possible device applications. Author
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