High Efficiency Silicon Solar cells
Semiannual technical summary rept. no. 3, 1 Jul-31 Dec 1960
TRANSITRON ELECTRONIC CORP WAKEFIELD MA
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A summary is presented of the process used at Transitron for the p on n solar cells. These have been superseded by the more radiation resistant n on p type cells. Problems in optimizing the junction depth of solar cells are discussed. The results of diffusion experiments are presented. The calibration of solar cell standards and artificial light systems for the testing of solar cells is discussed. Special attention is given to the problems encountered in using a tungsten artificial light source to determine the efficiency of solar cells. Experimental results are presented which validate the theoretical discussion. Results of electron bombardment experiments on p on n and n on p solar cells are given which show the n on p cell structure to be approximately five times more resistant to damage by 2 Mev and 700 Kev electrons. Electron bombardment experiments on n on p cells fabricated at Transitron are presented which agree with the results obtained with the Signal Corps n on p cells. The fabrication of Transitron radiation resistant n on p solar cells is discussed and the process as developed so far is given.
- Electric Power Production and Distribution