Accession Number:

AD0257423

Title:

APPLICATION OF TUNNELING TO ACTIVE DIODES

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Personal Author(s):

Report Date:

1961-03-01

Pagination or Media Count:

1.0

Abstract:

A description is given of a simple means of masking against epitax al GaAs crystal growth on a GaAs seed. The properties of manganese-doped GaAs tunnel diodes are described. An allgermanium-doped GaAs tunnel diode and its properties are described. The dependence of hump tunnel currents upon minority carrier injection in a variety of tunnel diodes is outlined. Some of the measured properties of manganese-doped GaAs are presented. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE