Accession Number:

AD0257387

Title:

APPLICATIONS OF TUNNELING TO ACTIVE DIODES

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y

Personal Author(s):

Report Date:

1961-03-28

Pagination or Media Count:

1.0

Abstract:

The characteristics of forward injection failure in GaAs tunnel diodes are summarized. A model involving rapidly diffusing impurities and junction traps is proposed as the failure mechanism. The diffusion and solubility of Cu in heavily doped GaAs were examined. This impurity is found to diffuse rapidly at low temperatures in p-type GaAs and is suspected of being an important contributor to the failure process. Drift experiments indicated that the rapidly diffusing species is uncharged in p-type material, contrary to expectations. The effectiveness of various procedures for removing Cu from the surface or volume of GaAs specimens have been studied. The dependence of tunneling upon uniaxial strain in Ge was studied, and a theoretical model which qualitatively accounts for the data is presented. The results of some measurements on n-type CdS crystals are reported. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE