Accession Number:

AD0256741

Title:

APPLICATION OF SEMICONDUCTORS DIODES TO LOW-NOISE AMPLIFIERS, HARMONIC GENERATORS, AND FAST-ACTING TR SWITCHES

Descriptive Note:

Corporate Author:

AIRBORNE INSTRUMENTS LAB INC MINEOLA N Y

Personal Author(s):

Report Date:

1960-12-01

Pagination or Media Count:

1.0

Abstract:

A study was made to determine the simplest method by which the one-port parametric amplifier could be made voltage tunable over the 1250 to 1400 mc frequency range. A further analysis of the sensitivity of a radar set using a degenerate parametric amplifier was made, and the results indicate tha it is usually desirable to detune the amplifier from the degenerate point. The best commercially-available varactor diodes were evaluated to determine the figures of merit obtainable with them. An experimental C-band degenerate amplifier was evaluated with the aid of a swept signal source. The measured amplifier performance indicated a total fixed-tuned bandwidth of 400 mc with a peak signal-to-signal gain of 19 db and a b oadband noise figure of 1.5 db. A tunnel diode amplifier was designed and tested. A second-harmonic generator using an experimental gallium-arsenide abrupt-junction diode was tested with a fundamental input frequency of 30 kmc. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE