Accession Number:

AD0256262

Title:

RESEARCH ON PROPERTIES OF CLEAN SURFACES

Descriptive Note:

Corporate Author:

HONEYWELL RESEARCH CENTER HOPKINS MINN

Report Date:

1961-05-01

Pagination or Media Count:

1.0

Abstract:

Experiments to determine the surface band structure of clean surfaces produced by cleavage in ultra-high vacuum have been performed on germanium, silicon, and indium antimonide. A clean Ge surface is highly p-type with the Fermi level at the surface near the valence band. This is brought about by acceptor-like surface states in the valence band with a density of 2 to 3 x 10 to the 12th powersq cm. The density of these low-lying surface states decreases when the surface is exposed to oxygen. A clean Si surface is nearly intrinsic, possibly slightly n-type, indicating that the dominant surface states near the center of the forbidden gap at the surface. Preliminary results on InSb are reported. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE