Accession Number:

AD0256012

Title:

SELF DIFFUSION OF LEAD-210 IN SINGLE CRYSTALS OF LEAD SELENIDE

Descriptive Note:

Corporate Author:

YALE UNIV NEW HAVEN CONN HAMMOND LAB

Report Date:

1961-04-12

Pagination or Media Count:

1.0

Abstract:

Self diffusion of Pb-210 in PbSe was studied in an inert atmosphere as a function of temperature over the range 400-800 C and defect concentration introduced by doping. Diffusion measurements were performed on specimens of p-type PbSe containing 10 to the 18th power holescc. and on specimens doped with 12 mol- Bi2Se3 to give n-type material with 5 x 10 to the 19th power electronscc or 12 mol- Ag2Se which resulted in p-type material containing 10 to the 19th power holescc. Doping with Bi2Se3 decreased diffusivities as compared with undoped PbSe whereas addition of Ag2Se caused diffusion coefficients to be increased. The diffusion activation energies were 0.83, 1.61, and 0.55 ev, for undoped PbSe, bismuth doped PbSe, and silver doped PbSe, respectively. The conclusion was made that Frenkel defects predominate in PbSe and that diffusion of Pb in this compound occurs predominantly by an interstitial mechanism under these conditions. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE