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HIGH-VOLTAGE PHOTOSENSITIVE THIN FILMS
LIBRARY OF CONGRESS WASHINGTON D C AEROSPACE TECHNOLOGY DIV
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Photosensitive CdTe films with photoelectromotive forces as high as 150 to 180 vcm were obtained for some CdTe specimens by alloying components andor by introducing an arsenic impurity. The dependence of the magnitude of the output voltage in films on such process factors as film thicknesses and base temperatures was established. Optimum results were obtained in film thicknesses of the order of 1.5 microns. In addition to CdTe films, studies were made of binary and ternary chalcogenides of Sb and Be. With these materials it was also possible to obtain high-voltage output considerably exceeding the width of the forbidden zone. On the basis of the material resistivities studied it was indicated that highvoltage output depends on high resistivity.
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