Accession Number:

AD0255795

Title:

HIGH-VOLTAGE PHOTOSENSITIVE THIN FILMS

Descriptive Note:

Corporate Author:

LIBRARY OF CONGRESS WASHINGTON D C AEROSPACE TECHNOLOGY DIV

Personal Author(s):

Report Date:

1961-04-19

Pagination or Media Count:

1.0

Abstract:

Photosensitive CdTe films with photoelectromotive forces as high as 150 to 180 vcm were obtained for some CdTe specimens by alloying components andor by introducing an arsenic impurity. The dependence of the magnitude of the output voltage in films on such process factors as film thicknesses and base temperatures was established. Optimum results were obtained in film thicknesses of the order of 1.5 microns. In addition to CdTe films, studies were made of binary and ternary chalcogenides of Sb and Be. With these materials it was also possible to obtain high-voltage output considerably exceeding the width of the forbidden zone. On the basis of the material resistivities studied it was indicated that highvoltage output depends on high resistivity.

Descriptors:

• *PHOTOELECTRIC MATERIALS
• *THIN FILM STORAGE DEVICES
• ANTIMONY COMPOUNDS
• BISMUTH COMPOUNDS
• CADMIUM COMPOUNDS
• VOLTAGE
• INTERMETALLIC COMPOUNDS
• PHOTOELECTRIC CELLS(SEMICONDUCTOR)
• PHOTOSENSITIVITY
• PHOTOTUBES
• ELECTRICAL RESISTANCE
• SULFIDES
• TELEVISION CAMERAS
• TELLURIDES

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE