Accession Number:

AD0254074

Title:

HIGH TEMPERATURE SEMICONDUCTOR RESEARCH

Descriptive Note:

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s):

Report Date:

1960-12-31

Pagination or Media Count:

1.0

Abstract:

An apparatus was completed for the growth of GaP single crystals from the melt by the magnetic Czochralski technique in the autoclave. Experiments were initiated on the preparation of thin crystalline films of GaAs using iodine as the transport agent. Measurements of Hall mobility as a function of light excitation intensity at room temperature have shown a strong dependence of mobility on intensity in single crystals of CdS, CdSe, GaAs, and InP. One simple type of such variation follows the functional dependence on carrier density expected of a change in scattering resulting from a change in occupancy of scattering centers. When such data are analyzed in terms of a point-defect scattering model, using independently determined center densities, giant scattering cross-sections of the order of 10 to the -11th power to 10 to the -10th power sq cm are calculated. Both n- and p-type single crystal layers of GaAs have been grown epitaxially using the method of surface decomposition and redeposition. Junction areas as large as 1 to 1.25 sq cm have been fabricated. Permanent degradation of GaAs tunnel diodes has now been observed at room temperature when current is passed through the diode. However, no degradation is observed at 200 C when no current is flowing. The junction temperature is believed to be below 100 C when current is flowing. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE