Accession Number:

AD0253926

Title:

AN INVESTIGATION OF SURFACE STATES AT A SILICON/SILICON-OXIDE INTERFACE EMPLOYING M-O-S DIODES

Descriptive Note:

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1961-02-23

Pagination or Media Count:

96.0

Abstract:

An investigation was made of the densities and time constants of surface states at a siliconsilicon-oxide interface. The tool used for this investigation was the M-O-S diode, a new solid-state device which, besides being useful for fundamental research of the type presented, also offers at least some potential as a circuit device due to its highly voltage-sensitive capacitance. Since an understanding of the M-O-S diode is essential, a general picture is given of its mode of operation and characteristics. The description given of the operation of the device is intuitive rather than mathematical, to enable the reader to obtain a physical feel for its operation. A comparison of the capacitance-vsvoltage curves of an idealized M-O-S diode and p-n step junction is presented, and reasons are given for the more rapid change of capacitance with voltage in the M-O-S diode. The effect of the possible existence of surface states at the siliconsilicon-oxide interface is discussed. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE