Accession Number:

AD0253075

Title:

BETA SILICON CARBIDE

Descriptive Note:

Corporate Author:

RAYTHEON CO WALTHAM MA

Personal Author(s):

Report Date:

1961-01-30

Pagination or Media Count:

1.0

Abstract:

The work on growing single-crystal silicon carbide in the cubic phase by gaseous cracking of silicon tetrachloride and by growth from elemental silicon fused in a carbon crucible is summarized. Examples of crystals grown by each of these methods are shown. Crystallographic and electrical measurements are treated. Optical data pertinent to the absorption edge and its temperature dependence as gathered from these samples is discussed. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE