Accession Number:

AD0163791

Title:

Photolithographic Etching Method for Nickel Oxide.

Descriptive Note:

Patent

Corporate Author:

OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C

Report Date:

1972-07-18

Pagination or Media Count:

1.0

Abstract:

The patent describes a photolithographic etching method for patterning a nickel oxide film on a passivated silicon substrate. The method involves applying a photoresist over the nickel oxide film, defining the desired nickel oxide pattern by a suitable masking technique, removing the photoresist from those areas not subject to the masking technique, etching away the nickel oxide film and stripping away the remaining photoresist to expose the desired nickel oxide pattern.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE