Photolithographic Etching Method for Nickel Oxide.
OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C
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The patent describes a photolithographic etching method for patterning a nickel oxide film on a passivated silicon substrate. The method involves applying a photoresist over the nickel oxide film, defining the desired nickel oxide pattern by a suitable masking technique, removing the photoresist from those areas not subject to the masking technique, etching away the nickel oxide film and stripping away the remaining photoresist to expose the desired nickel oxide pattern.
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