Accession Number:

AD0163753

Title:

Method of Making an Insulated Gate Field Effect Device.

Descriptive Note:

Patent,

Corporate Author:

OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C

Personal Author(s):

Report Date:

1971-12-21

Pagination or Media Count:

4.0

Abstract:

The patent describes a vapor etch and epitaxial refill technique for making an insulated gate field effect device. The vapor etch into a first-type conductivity silicon substrate results in an undercutting between windows such that a cavity is developed completely beneath the insulator separating the window regions. The cavity is then refilled epitaxially with silicon of a second conductivity type a shallow layer of heavily doped silicon of said first-type conductivity epitaxially regrown in the window area the gate insulator oxide thinned by etching and gate, source, and drain contacts made.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE