Method of Making an Insulated Gate Field Effect Device.
OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C
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The patent describes a vapor etch and epitaxial refill technique for making an insulated gate field effect device. The vapor etch into a first-type conductivity silicon substrate results in an undercutting between windows such that a cavity is developed completely beneath the insulator separating the window regions. The cavity is then refilled epitaxially with silicon of a second conductivity type a shallow layer of heavily doped silicon of said first-type conductivity epitaxially regrown in the window area the gate insulator oxide thinned by etching and gate, source, and drain contacts made.
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