Accession Number:

AD0163599

Title:

Method of Rapidly Detecting Contaminated Semiconductor Surfaces.

Descriptive Note:

Patent,

Corporate Author:

OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C

Report Date:

1972-06-27

Pagination or Media Count:

2.0

Abstract:

The general object of this invention is to provide a method of rapidly screening semiconductor surfaces for contamination. A further object of the invention is to provide such a method prior to integrated device processing. A particular object of the invention is to provide rapid, nondestructive method for screening a defective silicon substrate surface prior to integrated device processing. It has been found that a rapid, nondestructive method for screening a defective silicon substrate surface can be provided by exposing the substrate surface to a chemical vapor environment of nitric oxide NO, hydrogen fluoride HF, and water vapors at about 27 degrees C. to obtain a transparent surface film of about 50 to 100 angstroms in thickness, and then examining the film for surface uniformity and for the presence of geometric shapes.

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods

Distribution Statement:

APPROVED FOR PUBLIC RELEASE