Method of Rapidly Detecting Contaminated Semiconductor Surfaces.
OFFICE OF THE SECRETARY OF THE ARMY WASHINGTON D C
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The general object of this invention is to provide a method of rapidly screening semiconductor surfaces for contamination. A further object of the invention is to provide such a method prior to integrated device processing. A particular object of the invention is to provide rapid, nondestructive method for screening a defective silicon substrate surface prior to integrated device processing. It has been found that a rapid, nondestructive method for screening a defective silicon substrate surface can be provided by exposing the substrate surface to a chemical vapor environment of nitric oxide NO, hydrogen fluoride HF, and water vapors at about 27 degrees C. to obtain a transparent surface film of about 50 to 100 angstroms in thickness, and then examining the film for surface uniformity and for the presence of geometric shapes.
- Electrical and Electronic Equipment
- Test Facilities, Equipment and Methods