Accession Number : ADP013131


Title :   Multiple-Barrier Resonant Tunneling Structures for Application in a Microwave Generator Stabilized by Microstrip Resonator


Descriptive Note : Conference proceedings


Corporate Author : RUSSIAN ACADEMY OF SCIENCES MOSCOW (RUSSIA) LEBEDEV INST


Personal Author(s) : Evstigneev, S V ; Karuzskii, A L ; Mityagin, Yu A ; Perestoronin, A V ; Shipitan, D S


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/p013131.pdf


Report Date : 23 Jun 2000


Pagination or Media Count : 5


Abstract : One of the main goals of contemporary electronics is the expansion of device capability to high frequencies up to the terahertz range. In this paper the results of comparison investigation of vertical transport and high frequency oscillatory properties of double-barrier and triple-barrier resonant tunneling structures (DBRTS and TBRTS) combined with a microstrip resonator stabilizing circuit are presented. The I-V characteristic of measured TBRTS shows higher values of a peak-to-valley current ratio than the values measured for DBRTS in agreement with theoretical predictions. Microwave oscillations from semiconductor quantum well resonant-tunneling structures. stabilized by use of the microstrip resonator, are observed for the first time. The microstrip system. compatible with MBE methods, provides appropriate circuit conditions for realization of high frequency oscillations by use of planar active structures and looks rather encouraging for millimeter and submillimeter wavelength applications.


Descriptors :   *STRIP TRANSMISSION LINES , *TUNNEL DIODES , TRANSPORT PROPERTIES , MATHEMATICAL PREDICTION , RUSSIA , RESONATORS , SUBMILLIMETER WAVES , MICROWAVE OSCILLATORS


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE