Accession Number : ADP012611


Title :   Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy


Descriptive Note : Symposium proceedings


Corporate Author : ALABAMA A AND M UNIV NORMAL CENTER FORIRRADIATION OF MATERIALS


Personal Author(s) : Muntele, Iulia C ; Ila, Daryush ; Muntele, Claudiu I ; Poker, David B ; Hensley, Dale K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/p012611.pdf


Report Date : Jan 2002


Pagination or Media Count : 6


Abstract : Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 deg C, and fluences between 10(exp 15) and 10(exp 17) ions/sq cm. Post-implantation annealing at 1000 deg C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.


Descriptors :   *LATTICE DYNAMICS , *SILICON CARBIDES , ANNEALING , DAMAGE , RAMAN SPECTROSCOPY , ION IMPLANTATION , DOPING


Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE