Accession Number : ADD017399


Title :   Interband Lateral Resonant Tunneling Transistor.


Descriptive Note : Patent Application, Filed 14 Nov 94,


Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC


Personal Author(s) : Meyer, J R ; Hoffman, C A ; Bartoli, F J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/d017399.pdf


Report Date : 14 Nov 1994


Pagination or Media Count : 26


Abstract : This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices. jg


Descriptors :   *PATENT APPLICATIONS , *RESONANCE , *TUNNELING , *TRANSISTORS , HIGH TEMPERATURE , QUANTUM THEORY , GATES(CIRCUITS) , INTEGRATED CIRCUITS , HIGH DENSITY , FAN OUT CIRCUITS


Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE