Accession Number : ADB009740


Title :   Improved CVD Techniques for Depositing Passivation Layers of ICs


Descriptive Note : Final rept. 22 Apr 1974-30 Jun 1975


Corporate Author : RCA LABS PRINCETON NJ


Personal Author(s) : Kern, Werner ; Comizzoli, Robert B ; Fisher, A Wayne ; Schnable, George L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/b009740.pdf


Report Date : Oct 1975


Pagination or Media Count : 259


Abstract : This report describes the results of studies to increase the understanding of the requirements for successful glass passivation, by chemical vapor deposition (CVD), of metallized silicon planar integrated circuits (ICs) to improve both performance and reliability. The effects of various conditions for low-temperature (350 to 450 C) CVD of phosphosilicate glass (PSG) layers by oxidation of silane plus phosphine were correlated with the physical and chemical properties of deposited films. It is concluded that the important conditions to control are substrate temperature of deposition, oxygen-to-hydride ratio, hydride input, silane-to-phosphine ratio, and nitrogen input.


Descriptors :   *VAPOR DEPOSITION , *INTEGRATED CIRCUITS , *PASSIVITY , MANUFACTURING , CORROSION , DEGRADATION , CHEMICAL PROPERTIES , SEMICONDUCTOR DEVICES , ELECTRICAL PROPERTIES , NITROGEN , PHOSPHATE GLASS , SILICON COATINGS , SILICA GLASS , PHOSPHORUS , PHOSPHINE , SILANES , ALUMINUM , IMPURITIES , GLASS , LAYERS , SILICON DIOXIDE , DIELECTRICS , FILMS , FAILURE


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE