Accession Number : ADA636905


Title :   Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET


Descriptive Note : Final rept. 23 Jun 2014-22 Dec 2015


Corporate Author : TEXAS UNIV AT DALLAS


Personal Author(s) : Wallace, Robert M


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a636905.pdf


Report Date : 04 Feb 2016


Pagination or Media Count : 23


Abstract : A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al2O3 on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H2O precursor. The remote O2 plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al2O3 growth on AlGaN/GaN devices. In addition, unpublished work on AlN films are grown on AlGaN/GaN using PEALD is presented. An AlON interfacial layer is detected at the initial stage, and the interfacial layer may result in a high interface state density. The further optimization of PEALD AlN, especially at the initial stage is necessary in order to passivate the AlGaN/GaN HETMs using the PEALD AlN.


Descriptors :   *METAL OXIDE SEMICONDUCTORS , ALUMINUM GALLIUM NITRIDES , ALUMINUM NITRIDES , EXPERIMENTAL DESIGN , FABRICATION , FIELD EFFECT TRANSISTORS , FILMS , GALLIUM NITRIDES , HIGH ELECTRON MOBILITY TRANSISTORS , NANOTECHNOLOGY , SILICON


Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys


Distribution Statement : APPROVED FOR PUBLIC RELEASE