Accession Number : ADA635078


Title :   Optimization of GaN Nanorod Growth Conditions for Coalescence Overgrowth


Descriptive Note : Final rept. 29 Nov 2013-28 May 2015


Corporate Author : NATIONAL TAIWAN UNIV TAIPEI GRADUATE INST OF PHOTONICS AND OPTOELECTRONICS


Personal Author(s) : Yang, Chih-Chung


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a635078.pdf


Report Date : 04 Feb 2016


Pagination or Media Count : 21


Abstract : The growth and fabrication of GaN nanorod (NR) light-emitting diode (LED) arrays have attracted much attention because of their advantages of higher crystal quality, larger sidewall emission area, and non-polar or semi-polar quantum well (QW) formation. This report describes development of regularly-patterned GaN NR LED arrays grown on a patterned template with either continuous or pulsed growth mode using metal-organic vapor-phase epitaxy (MOVPE). Such an array device is expected to be useful for practical lighting application. Usually, with the pulsed growth mode, by switching group-III and V sources on and off alternatively, the NR geometry can be more uniform over an array. InGaN/GaN QWs can be deposited on the c-plane top face, m-plane sidewalls, and {1-101}-plane slant facets on a c-axis-oriented NR with the highest (lowest) growth rate in the c-plane ({1-101}-plane). After the overgrowth of p-GaN on an NR with n-GaN core and QW deposition, an NR LED array can be implemented by covering the NRs with a transparent conductor. It has been demonstrated that the optical and electrical performances of an NR LED array can be comparable to those of a planar LED. Further developments in NR LED growth and process techniques can lead to an outperforming LED device with the NR structure.


Descriptors :   *EPITAXIAL GROWTH , *GALLIUM NITRIDES , *LIGHT EMITTING DIODES , *NANOTECHNOLOGY , ARRAYS , QUANTUM WELLS


Subject Categories : Inorganic Chemistry
      Electrooptical and Optoelectronic Devices
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE