Accession Number : ADA625922


Title :   EUO-Based Multifunctional Heterostructures


Descriptive Note : Final rept. Apr 2010-Jun 2015


Corporate Author : CORNELL UNIV ITHACA NY OFFICE OF SPONSORED PROGRAMS


Personal Author(s) : Schlom, Darrell G


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a625922.pdf


Report Date : 06 Jun 2015


Pagination or Media Count : 12


Abstract : Using molecular-beam epitaxy heterostructures were grown in which EuO was controllably doped, strained, patterned, and integrated with other materials to enable novel effects and emerging device concepts to be explored. These included (1) achieving a drastic increase of the magnetoresistance and the metal-insulator transition resistance ratios of doped EuO by interfacing this semiconductor with niobium; the observed effect is general and may be applied to any metal/semiconductor interface where the semiconductor shows large Zeeman splitting under magnetic field, (2) understanding the changes in electronic structure and Fermi-surface reconstruction that occur as doped EuO progresses through the ferromagnetic metal-insulator transition; a lack of carrier activation arises from defect states near the Gamma point, (3) demonstrating that ultrafast optical pulses can be used to strengthen or weaken the magnetic order of doped EuO by 10% in 3 ps, (4) establishing a new method for making EuO films by high-vacuum techniques with perfection and properties previously accessible only by ultra-high vacuum methods, and (5) straining EuO by over 6% to achieve the simplest and highest temperature strong multiferroic known (simultaneously ferromagnetic and ferroelectric).


Descriptors :   *MOLECULAR BEAM EPITAXY , EPITAXIAL GROWTH , FERROELECTRIC MATERIALS , FERROMAGNETIC MATERIALS , HETEROGENEITY , HIGH RATE , HIGH TEMPERATURE , INTEGRATED SYSTEMS , LIGHT PULSES , MAGNETIC FIELDS , MAGNETORESISTANCE , SEMICONDUCTORS , ZEEMAN EFFECT


Subject Categories : Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE