Accession Number : ADA624401


Title :   Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2


Descriptive Note : Journal article


Corporate Author : CALIFORNIA UNIV BERKELEY NANOSCALE SCIENCE AND ENGINEERING CENTER


Personal Author(s) : Ye, Yu ; Ye, Ziliang ; Gharghi, Majid ; Zhu, Hanyu ; Zhao, Mervin ; Wang, Yuan ; Yin, Xiaobo ; Zhang, Xiang


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a624401.pdf


Report Date : 14 May 2014


Pagination or Media Count : 5


Abstract : In two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2 fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2 diode, attributed to the excited exciton state of a direct-exciton transition.


Descriptors :   *ELECTROLUMINESCENCE , *EXCITONS , ABSORPTION , ANNIHILATION REACTIONS , BAND GAPS , EFFICIENCY , EMISSION , GRAPHENE , PEAK VALUES , RECOMBINATION REACTIONS , REPRINTS , ROOM TEMPERATURE , SIGNAL TO NOISE RATIO , SILICON , SUBSTRATES , TWO DIMENSIONAL


Subject Categories : Crystallography
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE