Accession Number : ADA623747


Title :   Polarity Control and Doping in Aluminum Gallium Nitride


Descriptive Note : Doctoral thesis


Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH


Personal Author(s) : Hoffmann, Marc P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a623747.pdf


Report Date : Jun 2013


Pagination or Media Count : 147


Abstract : AlGaN can be used for the fabrication of lateral polar structures (LPS) by a periodic inversion of the c-axis as achieved by a polarity control scheme during its growth by metal organic chemical vapor deposition (MOCVD). These structures can be used for second harmonic generation in the ultraviolet spectral region, as well as for lateral p/n-junctions. The two major challenges addressed in this work exist in the general implementation of the AlGaN technology and in the fabrication of AlGaN LPS, and both prevent the realization of AlGaN UV-emitters. These challenges are: (1) the presence of a high concentrations of native defects and extrinsic impurities in AlGaN that can reduce the efficiency of optoelectronic devices, especially in the case of high doping with Mg or Si, and (2) as typically observed, a growth rate difference that exists during the simultaneous growth of III- and N-polar domains adjacent to each other in a LPS.


Descriptors :   *ALUMINUM , *CHEMICAL VAPOR DEPOSITION , *DOPING , *GALLIUM NITRIDES , ANNEALING , BAND GAPS , CONCENTRATION(COMPOSITION) , DEFECTS(MATERIALS) , EMITTANCE , EPITAXIAL GROWTH , FABRICATION , FERMI SURFACES , HALL EFFECT , IMPURITIES , JUNCTIONS , POLARITY , SECOND HARMONIC GENERATION , SUBSTRATES , SUPERCONDUCTORS , SYNCHRONISM , THESES , ULTRAVIOLET SPECTRA


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Electricity and Magnetism
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE