Accession Number : ADA623559


Title :   Same-Side Platinum Electrodes for Metal Assisted Etching of Porous Silicon


Descriptive Note : Final rept. Jan-Aug 2015


Corporate Author : ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE


Personal Author(s) : Ervin, Matthew H ; Isaacson, Brian


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a623559.pdf


Report Date : Nov 2015


Pagination or Media Count : 22


Abstract : We have developed new procedures for etching porous silicon (PSi), which will allow PSi devices to be more easily integrated with other devices used for initiating, controlling, or utilizing the output of the PSi devices. Of the 2 processes developed, the sacrificial electrode process is the simplest, but it produces an inhomogeneous PSi thickness across the wafer and introduces surface topography due to electro-polishing. By using the anchored electrode method, which incorporates a dielectric layer, more controllable etch depths and patterned devices are obtainable. One complication is that a proximity effect is observed where features closer to the electrode etch more rapidly. A simple voltage divider model can be used to predict the relative etch rates, but more work is required before a quantitative model for predicting etch depth will be possible. In order to vary the etch depth by varying the local electrode/silicon (Si) ratio, the electrode will need to be cut up into electrically isolated sections or else the carriers will conduct along the length of the electrode causing more etching at the most easily reached exposed Si.


Descriptors :   *ELECTRODES , *ETCHING , *POROUS MATERIALS , *SILICON , DIELECTRICS , INTEGRATED SYSTEMS , METALS , PLATINUM , THICKNESS , TOPOGRAPHY , VOLTAGE DIVIDERS , WAFERS


Subject Categories : Inorganic Chemistry
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Distribution Statement : APPROVED FOR PUBLIC RELEASE