Accession Number : ADA622533


Title :   Strain and Structure Heterogeneity in MoS2 Atomic Layers Grown by Chemical Vapour Deposition


Descriptive Note : Journal article


Corporate Author : RICE UNIV HOUSTON TX DEPT OF MATERIALS SCIENCE


Personal Author(s) : Liu, Zheng ; Amani, Matin ; Njmaei, Sina ; Xu, Quan ; Zou, Xiaolong ; Zhou, Wu ; Yu, Ting ; Qiu, Caiyu ; Birdwell, A G ; Crowne, Frank J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a622533.pdf


Report Date : 18 Nov 2014


Pagination or Media Count : 12


Abstract : Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.


Descriptors :   *CHEMICAL VAPOR DEPOSITION , *HETEROGENEITY , *LAYERS , *MOLYBDENUM COMPOUNDS , *STRAIN(MECHANICS) , BAND GAPS , GRAIN BOUNDARIES , PHOTOLUMINESCENCE , SPECTROSCOPY


Subject Categories : Industrial Chemistry and Chemical Processing
      Inorganic Chemistry
      Physical Chemistry
      Mechanics


Distribution Statement : APPROVED FOR PUBLIC RELEASE