Accession Number : ADA616757


Title :   Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module


Descriptive Note : Final rept. Jul 2013-Sep 2013


Corporate Author : ARMY RESEARCH LAB ADELPHI MD


Personal Author(s) : Ovrebo, Gregory K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a616757.pdf


Report Date : Feb 2015


Pagination or Media Count : 24


Abstract : A simulation was performed to predict the thermal behavior of a commercial power module with silicon insulated gate bipolar transistors (IGBTs) during switching of multiple power pulses.


Descriptors :   *BIPOLAR TRANSISTORS , *PULSES , *THERMAL PROPERTIES , COMMERCE , GATES(CIRCUITS) , INSULATION , MODULAR CONSTRUCTION , POWER , SIMULATION , SWITCHING , THERMAL RADIATION


Subject Categories : Electrical and Electronic Equipment
      Thermodynamics


Distribution Statement : APPROVED FOR PUBLIC RELEASE