Accession Number : ADA615872


Title :   Tunable High Brightness Semiconductor Sources


Descriptive Note : Final rept. 5 Nov 2010-1 Feb 2015


Corporate Author : AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIR


Personal Author(s) : Bedford, Robert ; Husaini, Saima ; Reyner, Charles ; Dang, Tuoc


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a615872.pdf


Report Date : May 2015


Pagination or Media Count : 92


Abstract : This final report documents research included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid-IR type-I quantum well laser efficiency improvement are presented utilizing deep understanding of Auger recombination effects and how to change them through proper laser design. Experimental results are presented to confirm this effect at a wavelength of approximately 2 microns. Future directions are presented, including metamorphic buffer layer grown material, interfacial misfit layers, etc. ??Second, a surface-emitting distributed feedback type-II quantum well laser is introduced and experimental advances are presented. Thirdly, progress in graphene-based saturable absorbers and reverse saturable absorbers are presented. Finally, advances in solder technology for optoelectronics (including, but not limited to mid-IR lasers) is presented with novel high surface quality indium, and intracavity difference frequency generation.


Descriptors :   *QUANTUM WELLS , *SEMICONDUCTORS , ABSORBERS(MATERIALS) , AUGER ELECTRONS , BRIGHTNESS , DIFFERENCE FREQUENCY , DISTRIBUTED AMPLIFIERS , ELECTROOPTICS , INFRARED LASERS , OPTOELECTRONICS , QUANTUM THEORY , RECOMBINATION REACTIONS


Subject Categories : Electrical and Electronic Equipment
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE