Accession Number : ADA608971


Title :   Emergence of Very Broad Infrared Absorption Band By Hyperdoping of Silicon with Chalcogens


Descriptive Note : Journal article


Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO


Personal Author(s) : Umezu, Ikurou ; Warrender, Jeffrey M ; Charnvanichborikarn, Supakit ; Kohno, Atsushi ; Williams, James S ; Tabbal, Malek ; Papazoglou, Dimitris G ; Zhang, Xi-Cheng ; Azis, Michael J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a608971.pdf


Report Date : 03 Jun 2013


Pagination or Media Count : 10


Abstract : We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05 1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.


Descriptors :   *ABSORPTION SPECTRA , *CHALCOGENS , *DOPING , *INFRARED SPECTRA , *SILICON , ABSORPTION , ANNEALING , ATOMS , ION IMPLANTATION , IONS , LASERS , LAYERS , MELTING , SELENIUM , SEMICONDUCTORS , SULFUR , TELLURIUM


Subject Categories : Inorganic Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE