Accession Number : ADA602349


Title :   Transparent Oxide TFTs Fabricated by Atomic Layer Deposition


Descriptive Note : Final rept. 23 May 2011-22 May 2013


Corporate Author : NARA INST OF SCIENCE AND TECHNOLOGY IKOMA (JAPAN)


Personal Author(s) : Uraoka, Yukiharu


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a602349.pdf


Report Date : 17 Apr 2014


Pagination or Media Count : 11


Abstract : To realize the high performance and reliable ZnO thin films transistors, we focused on atomic layer deposition. Previously we have established basic process condition for fabrication of ZnO film and thin film transistors. In this study, we will develop higher quality thin film and higher performance thin film transistors by using atomic layer deposition.


Descriptors :   *TRANSISTORS , DEPOSITION , JAPAN , SEMICONDUCTORS , THIN FILMS , ZINC OXIDES


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE