Accession Number : ADA602040


Title :   Polarization Induced Doping in p-ZnMgO


Descriptive Note : Final rept. 1 Oct 2012-30 Jun 2013


Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO CENTER FOR RESEARCH AND EDUCATION IN OPTICS AND LASERS


Personal Author(s) : Schoenfeld, Winston V


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a602040.pdf


Report Date : 06 Sep 2013


Pagination or Media Count : 18


Abstract : The primary objective of the STIR project was to investigate the feasibility of realizing graded p-type MgZnO structures, suitable for device integration, using engineered Mg concentration grading. The project was successful in demonstrating a graded MgxZn1-xO epitaxial layer on sapphire, grown by plasma-assisted molecular beam epitaxy (MBE). To realize this accomplishment, MgZnO layers were optimized to allow for up to 46% Mg with no observable phase segregation and sub-nanometer roughness. A primary enabling element of this was the development of a high temperature ZnO buffer layer, resulting in high Mg concentration with low dislocations. A graded structure with Mg concentration from 0 to 43% Mg was grown and validated with SIMS depth profiling. This work indicates that with proper control over flux sources, a graded MgZnO layer is possible and suitable for polarization doping with the proper background carrier concentration control. Future work should focus on obtaining precise control of the Mg concentration through use of a flux monitor and the potential for using nitrogen to combat background n-type carriers in order to realize a high hole density channel.


Descriptors :   *DOPING , *MAGNESIUM OXIDES , *POLARIZATION , HIGH TEMPERATURE , LAYERS , MOLECULAR BEAM EPITAXY , PLASMAS(PHYSICS) , ROUGHNESS , ZINC


Subject Categories : Inorganic Chemistry
      Optics
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE