Accession Number : ADA596171


Title :   A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)


Descriptive Note : Final rept. 3 Aug 2011-5 Aug 2013


Corporate Author : ILLINOIS INST OF TECH CHICAGO


Personal Author(s) : Xu, Yang


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a596171.pdf


Report Date : Jan 2014


Pagination or Media Count : 56


Abstract : The objective of this proposal is to design and characterize components for utilization in a 94GHz temperature compensated low noise amplifier (LNA) using a 45nm SOI CMOS technology. A ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution, a temperature sensor will also be developed in 90nm CMOS to be utilized in conjunction with a III-V based 94 GHz LNA.


Descriptors :   *LOW NOISE AMPLIFIERS , *METAL OXIDE SEMICONDUCTORS , *SEMICONDUCTORS , *SILICON ON INSULATOR , GAIN , GROUP III COMPOUNDS , GROUP V COMPOUNDS , SILICON , TEMPERATURE SENSITIVE ELEMENTS , UTILIZATION


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE