Accession Number : ADA584208


Title :   Sensitive Mid-Infrared Detection in Wide-Bandgap Semiconductors Using Extreme Non-Degenerate Two-Photon Absorption


Descriptive Note : Journal article


Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO CENTER FOR RESEARCH AND EDUCATION IN OPTICS AND LASERS


Personal Author(s) : Fishman, Dmitry A ; Cirloganu, Claudiu M ; Webster, Scott ; Padilha, Lazaro A ; Monroe, Morgan ; Hagan, David J ; Van Stryland, Eric W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a584208.pdf


Report Date : 07 Aug 2011


Pagination or Media Count : 6


Abstract : Identifying strong and fast nonlinearities for today s photonic applications is an ongoing effort1. Materials2 5 and devices6 9 are typically sought to achieve increasing nonlinear interactions. We report large enhancement of two-photon absorption through intrinsic resonances using extremely non-degenerate photon pairs. We experimentally demonstrate two-photon absorption enhancements by factors of 100 1,000 over degenerate two-photon absorption in direct-bandgap semiconductors. This enables gated detection of sub-bandgap and sub-100 pJ mid-infrared radiation using large-bandgap detectors at room temperature. Detection characteristics are comparable in performance to liquid-nitrogen-cooled HgCdTe (MCT) detectors. The temporal resolution of this gated detection by two-photon absorption is determined by the gating pulse duration.


Descriptors :   *INFRARED DETECTION , *TWO PHOTON ABSORPTION , *WIDE GAP SEMICONDUCTORS , BAND GAPS , INTERMEDIATE INFRARED RADIATION , PHOTODIODES


Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Atomic and Molecular Physics and Spectroscopy


Distribution Statement : APPROVED FOR PUBLIC RELEASE