Accession Number : ADA561811


Title :   Radiation Effects On Emerging Electronic Materials And Devices


Descriptive Note : Final performance rept. Sep 2005-Jan 2011


Corporate Author : VANDERBILT UNIV NASHVILLE TN INST FOR SPACE AND DEFENSE ELECTRONICS


Personal Author(s) : Schrimpf, Ron ; Fleetwood, Dan ; Pantelides, Sokrates ; Feldman, Len ; Law, Mark ; Cressler, John ; Garfunkle, Eric ; Lucovsky, Gerald ; Barnaby, Hugh


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a561811.pdf


Report Date : 17 Jan 2010


Pagination or Media Count : 146


Abstract : This report documents work conducted as part of a five-year Multi-disciplinary University Research Initiative (MURI) in the area of Semiconductor Radiation Physics. The objectives of this program are to examine and understand the underlying physical phenomena that control the radiation response of semiconductor technologies incorporating emerging materials and devices. The radiation response and electrical properties of technologies that exhibit exception promise for application in DoD systems are investigated experimentally and through application of advanced theory and simulation. The overall purpose is to develop knowledge and tools that will guide development of future radiation-hardened electronics. This MURI program includes researchers from Vanderbilt University, The University of Florida, Georgia Institute of Technology, North Carolina State University, Rutgers University and Arizona State University and strong collaboration with leading industrial and government labs.


Descriptors :   *ELECTRONIC EQUIPMENT , *RADIATION EFFECTS , DEFENSE SYSTEMS , DIELECTRICS , ELECTRICAL PROPERTIES , ELECTRONICS , FIELD EFFECT TRANSISTORS , RADIATION HARDENING , SEMICONDUCTORS , UNIVERSITIES


Subject Categories : Radiobiology
      Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE