Accession Number : ADA547984


Title :   Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1


Descriptive Note : Final rept.


Corporate Author : GWANGJU INST OF SCIENCE AND TECHNOLOGY (SOUTH KOREA)


Personal Author(s) : Jang, Jae-Hyung


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a547984.pdf


Report Date : 30 Apr 2011


Pagination or Media Count : 17


Abstract : In Part I of this project, attempts to develop low capacitance, depletion-mode ZnO-based thin-film transistors (TFTs) were studied using two approaches. The first approach used elevated substrate temperature growth of a-IGZO channel layers, but most of the devices exhibited enhancement-mode operation. The second approach studied the effect of hydrogenation of a-IGZO channel layers during post-annealing. Even though the device quality improved, depletion-mode operation was not achieved. Depletion-mode operation was achieved in Part II of this project to be reported separately.


Descriptors :   *THIN FILMS , *TRANSISTORS , *ZINC OXIDES , CAPACITANCE , FABRICATION , GROWTH(GENERAL) , HIGH TEMPERATURE , KOREA , SUBSTRATES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE