Accession Number : ADA547983
Title : High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays
Descriptive Note : Final rept.
Corporate Author : NARA INST OF SCIENCE AND TECHNOLOGY IKOMA (JAPAN)
Personal Author(s) : Uraoka, Yukiharu
Report Date : 19 Aug 2011
Pagination or Media Count : 10
Abstract : In this study, ZnO thin-film transistors (TFTs) were fabricated using channel layers deposited by plasma assisted ALD (PA-ALD) at low temperature. During the research high-performance ZnO TFTs were obtained by reducing residual carrier concentrations.
Descriptors : *TRANSISTORS , ELECTRICAL PROPERTIES , FABRICATION , GROWTH(GENERAL) , OXIDIZERS , PERFORMANCE(ENGINEERING) , PHYSICAL PROPERTIES , REFRACTIVE INDEX , RELIABILITY , THIN FILMS , ZINC OXIDES
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE