Accession Number : ADA547983


Title :   High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays


Descriptive Note : Final rept.


Corporate Author : NARA INST OF SCIENCE AND TECHNOLOGY IKOMA (JAPAN)


Personal Author(s) : Uraoka, Yukiharu


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a547983.pdf


Report Date : 19 Aug 2011


Pagination or Media Count : 10


Abstract : In this study, ZnO thin-film transistors (TFTs) were fabricated using channel layers deposited by plasma assisted ALD (PA-ALD) at low temperature. During the research high-performance ZnO TFTs were obtained by reducing residual carrier concentrations.


Descriptors :   *TRANSISTORS , ELECTRICAL PROPERTIES , FABRICATION , GROWTH(GENERAL) , OXIDIZERS , PERFORMANCE(ENGINEERING) , PHYSICAL PROPERTIES , REFRACTIVE INDEX , RELIABILITY , THIN FILMS , ZINC OXIDES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE