Accession Number : ADA546437


Title :   Theory and Device Modeling for Nano-Structured Transistor Channels


Descriptive Note : Final rept. 30 Jun 2008-30 May 2011


Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING


Personal Author(s) : Steinke, Isaiah P ; Ruden, P P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a546437.pdf


Report Date : Jun 2011


Pagination or Media Count : 28


Abstract : We have developed two models to describe the behavior of field-effect transistors with nano-structured channels. The primary factor that limits the performance of the transistor is the presence of grain boundaries. In our macroscopic model, we have explicitly modified the field-effect mobility to include terms that are dependent upon both the local carrier concentration and longitudinal field. In our mesoscopic model, we more closely look at the role of the individual grains by incorporating ideas from percolation theory. In this model, the carrier statistics are connected to the site and bond occupation probabilities in the site-bond percolation problem in order to determine the threshold voltage.


Descriptors :   *NANOSTRUCTURES , *FIELD EFFECT TRANSISTORS , THRESHOLD EFFECTS , THEORY , PROBABILITY , SITES , VOLTAGE , CHARGE CARRIERS , BONDING , GRAIN BOUNDARIES , PERCOLATION , JOBS , MOBILITY , STATISTICS


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE