Accession Number : ADA538491


Title :   Cathodoluminescence of Irradiated Hafnium Dioxide


Descriptive Note : Master's Thesis


Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT


Personal Author(s) : Purcell, Emily A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a538491.pdf


Report Date : Mar 2011


Pagination or Media Count : 82


Abstract : The purpose of this research is to understand the effect of radiation on HfO2 thin films, and to compare the quality of HfO2 thin films produced by both atomic layer deposition (ALD) and pulsed laser deposition (PLD); PLD samples had varying substrate temperatures during deposition (300 deg C, 500 deg C, and 750 deg C). The entirety of this research was conducted using cathodoluminescence (CL) as the examination method. The excitation source was a Kimball Physics EMG-12 electron gun. The photomultiplier tube contained a gallium arsenide photocathode. Measurements were made with beam energies ranging from 1 to 10 keV and beam currents ranging from 30 to 50 microA, both at room temperature and at 7K. The experimentally-determined band gap of HfO2 was consistent with published data, but many other features found in the literature were not present in the CL data obtained. HfO2 appeared to be radiation hard up to the levels of radiation to which it was exposed. A higher substrate temperature during deposition for PLD samples produced a better material than lower temperatures. ALD produced a more consistent thickness but PLD ultimately produced a better quality material with respect to the spectrum obtained.


Descriptors :   *HAFNIUM , *ATOMIC LAYER EPITAXY , *DIOXIDES , *IRRADIATION , *CATHODOLUMINESCENCE , ROOM TEMPERATURE , CONSISTENCY , DEPOSITION , PHOTOMULTIPLIER TUBES , LOW TEMPERATURE , PULSED LASERS , GALLIUM ARSENIDES , EXCITATION , BAND GAPS , PHOTOCATHODES


Subject Categories : Optics
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE