Accession Number : ADA538250


Title :   Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys


Descriptive Note : Doctoral thesis


Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING AND MANAGEMENT


Personal Author(s) : Wei, Jean


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a538250.pdf


Report Date : Mar 2011


Pagination or Media Count : 160


Abstract : A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.


Descriptors :   *OPTICAL PROPERTIES , *INDIUM ARSENIDES , *TERNARY COMPOUNDS , *INDIUM PHOSPHIDES , *INDIUM GALLIUM ARSENIDES , *ELECTRICAL PROPERTIES , GROUP III COMPOUNDS , GROUP IV COMPOUNDS , GROUP V COMPOUNDS , ELECTRON TRANSITIONS , ENERGY BANDS , GALLIUM ALLOYS , BINARY COMPOUNDS , ARSENIC ALLOYS , BAND GAPS , BULK MATERIALS , SEMICONDUCTORS , INDIUM ALLOYS , ENERGY GAPS , PHOTOLUMINESCENCE , HALL EFFECT , ELECTROOPTICS


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Properties of Metals and Alloys
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE