Accession Number : ADA533167


Title :   Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications


Descriptive Note : Final rept. 1 Aug 2006-31 Jan 2010


Corporate Author : CINCINNATI UNIV OH


Personal Author(s) : Steckl, Andrew J ; Wang, Rui ; Zhong, Mingyu


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a533167.pdf


Report Date : May 2010


Pagination or Media Count : 129


Abstract : This is a proposal to develop an injection laser on Si using rare-earth doped GaN heteroepitaxially grown on Si substrates. The success of this approach will result in the availability of a laser light sources directly built on Si and operating at wavelengths throughout the visible and near-IR range. We have demonstrated the first ever visible lasing on Si using GaN:Eu grown on Si (with unique AlGaN transition layers) by optical pumping. The preliminary results are very encouraging: stimulated emission threshold of only 110kW/cm2, optical gain of 100/cm and loss of 45/cm. The proposed program will develop an injection laser based on AlGaN-GaN:RE-AlGaN double heterojunction structures built on Si substrates.


Descriptors :   *INJECTION LASERS , *LASER BEAMS , *RARE EARTH ELEMENTS , THRESHOLD EFFECTS , THIN FILMS , SUBSTRATES , OPTICAL PUMPING , EMISSION , TRANSITIONS , INFRARED RADIATION , NEAR INFRARED RADIATION , STIMULATION(GENERAL) , LIGHT SOURCES


Subject Categories : Lasers and Masers


Distribution Statement : APPROVED FOR PUBLIC RELEASE