Accession Number : ADA522642
Title : Rare-earth Doped GaN - An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion (2nd year)
Descriptive Note : Technical rept.
Corporate Author : ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
Personal Author(s) : Wraback, Michael ; Dubinskiy, Mark
Report Date : Jun 2010
Pagination or Media Count : 28
Abstract : In situ neodymium (Nd) doping of gallium nitride (GaN) and aluminum nitride (AlN) by plasma-assisted molecular beam epitaxy (PA-MBE) has been demonstrated for the first time. For GaN, Nd doping as high as 8 at.% has been demonstrated, with no evidence of phase segregation identified by x-ray diffraction (XRD) for Nd up to 1 at.%. The strongest roomtemperature luminescence was observed for a doping level between 0.1-1 at.%. The Stark energy levels of the three characteristic Nd emission multiplets were resolved by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhanced substitutional doping at the gallium (Ga) site and low optical loss in waveguide structures suggests that GaN:Nd may have significant potential for use in simple, area-scalable, room-temperature, diode-pumped solidstate high energy lasers (HELs). Next-generation devices may be able to take advantage of the improved thermal conductivity of an AlN host.
Descriptors : *SOLID STATE LASERS , X RAY DIFFRACTION , WAVEGUIDES , HIGH ENERGY LASERS , ALUMINUM GALLIUM NITRIDES , NEODYMIUM , STARK EFFECT , MOLECULAR BEAM EPITAXY , ALUMINUM NITRIDES , PHOTOLUMINESCENCE , DOPING
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Lasers and Masers
Atomic and Molecular Physics and Spectroscopy
Solid State Physics
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE