Accession Number : ADA517029


Title :   Metal Induced Growth of Si Thin Films and NiSi Nanowires


Descriptive Note : Final performance rept. 1 Dec 2006-30 Nov 2009


Corporate Author : NEW YORK STATE UNIV RESEARCH FOUNDATION AMHERST NY


Personal Author(s) : Anderson, Wayne A ; Mersich, Peter


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a517029.pdf


Report Date : 25 Feb 2010


Pagination or Media Count : 15


Abstract : Thin film silicon has many useful purposes. Among the applications are solar cells and thin film transistors. This project involves a new and potentially lower cost method to produce thin silicon films. The method is called metal induced growth (MIG). A thin catalyst metal layer deposited on a foreign low cost substrate serves as the basis for growth of a nanocrystalline silicon thin film with thickness of 5-10 microns and preferred orientation of (220). The silicon deposition by magnetron sputtering on the heated substrate resulted in columnar structured grains having a diameter up to about 0.5 microns. Schottky barrier solar cells fabricated on these films gave a photocurrent of about 5 mA/sq cm and open circuit voltage of 0.25 volts. A modified process gave NiSi crystalline nanowires with length up to 10 microns and diameter of about 50 nm.


Descriptors :   *SILICON , *SOLAR CELLS , *THIN FILMS , *TRANSISTORS , CATALYSTS , CIRCUITS , CRYSTALS , DEPOSITION , GROWTH(GENERAL) , LOW COSTS , MAGNETRONS , METALS , SCHOTTKY BARRIER DEVICES , SPUTTERING , VOLTAGE


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Electric Power Production and Distribution


Distribution Statement : APPROVED FOR PUBLIC RELEASE