Accession Number : ADA510151


Title :   Contacts to Semiconductor Nanowires


Descriptive Note : Final rept. 15 Jun 2005-14 Jun 2009


Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK OFFICE OF SPONSORED PROGRAMS


Personal Author(s) : Mohney, S E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a510151.pdf


Report Date : 03 Oct 2009


Pagination or Media Count : 17


Abstract : Metal contacts to semiconductor nanowires share similarities with their thin-film counterparts, but they also exhibit important differences due to geometry. For example, in the formation of platinum silicide contacts to silicon nanowires, it is possible to achieve uniform platinum silicide/silicon segmented nanowires, but some ratios of platinum to silicon and annealing conditions lead to a peculiar kinking of the nanowires not analogous to the thin-film case. Also interesting is the effect of geometry on Schottky barrier contacts to semiconductor nanowires.


Descriptors :   *METAL CONTACTS , *NANOWIRES , *SEMICONDUCTORS , SCHOTTKY BARRIER DEVICES , SILICIDES , SILICON , THIN FILMS , ANNEALING , PLATINUM


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE