Accession Number : ADA473280


Title :   Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices


Descriptive Note : Final technical rept. 1 Mar 2005-31 May 2007


Corporate Author : PURDUE UNIV LAFAYETTE IN


Personal Author(s) : Cooper, James A ; Capano, Michael A ; Feldman, Leonard C ; Skowronski, Marek ; Williams, John R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a473280.pdf


Report Date : 01 Aug 2007


Pagination or Media Count : 441


Abstract : In this work we developed the technology for 20 kV insulated gate bipolar transistors (IGBTs) in 4H-SiC. The p-channel IGBT is formed on a 175-micron p-type epilayer on an n+ substrate. The n-IGBT is formed on the C-face of a 200-micron n-type free-standing epilayer. When operated at 300 W/cm2, the p- and n-IGBTs carry 30 and 27 A/cm2 respectively, independent of temperature from 23 deg C to 175 deg C. These results were made possible by advances in epigrowth of thick SiC epilayers with low doping, high carrier lifetime, and minimal basal plane dislocations. Ambipolar lifetimes as high as 1.7 microns and BPD densities as low as 2.6 cm-2 were achieved. The work was further supported by research on the MOS interface on both C-face and Si-face SiC, including studies of threshold voltage and long-term reliability. Oxides on the C-face have comparable mobility to those on the Si-face, but lower breakdown fields and reduced long-term reliability.


Descriptors :   *METAL OXIDE SEMICONDUCTORS , *SILICON CARBIDES , *SWITCHING CIRCUITS , MOBILITY , INSULATION , DISLOCATIONS , BIPOLAR TRANSISTORS , RELIABILITY(ELECTRONICS) , POINT DEFECTS , VOLTAGE


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE