Accession Number : ADA472076


Title :   Fabrication of Organic Thin Film Transistors Using Layer-By-Layer Assembly (Preprint)


Descriptive Note : Journal article


Corporate Author : CINCINNATI UNIV OH


Personal Author(s) : Stricker, Jeffery T ; Gudmundsdottir, Anna D ; Smith, Adam P ; Taylor, Barney E ; Durstock, Michael F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a472076.pdf


Report Date : Mar 2007


Pagination or Media Count : 27


Abstract : Layer-by-layer assembly is presented as a deposition technique for the incorporation of ultra-thin gate dielectric layers into thin-film transistors utilizing a highly doped organic active layer. This deposition technique enables the fabrication of device structures with a controllable gate dielectric thickness. In particular, devices with a dielectric layer comprised of poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) bilayer films were fabricated to examine the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the transistor active layer. The transistor Ion/off ratio and switching speed are shown to be controlled by the gate bias, which is dependent upon the voltage applied and the number of bilayers deposited for the gate dielectric. The devices operate in the depletion mode as a result of de-doping of the active layer with the application of a positive gate bias. The depletion and recovery rate are highly dependent on the level of hydration in the film and the environment under which the device is operated. These observations are consistent with an electrochemical de-doping of the conducting polymer during operation.


Descriptors :   *POLYELECTROLYTES , *THIN FILMS , *TRANSISTORS , GATES(CIRCUITS) , SPIN COATINGS , ELECTROCHEMISTRY , DIELECTRIC FILMS


Subject Categories : Industrial Chemistry and Chemical Processing
      Polymer Chemistry
      Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE