Accession Number : ADA462260
Title : Device Demonstration
Descriptive Note : Final rept.
Corporate Author : BAE SYSTEMS ELECTRONICS AND INTEGRATED SOLUTIONS NASHUA NH
Report Date : 31 Dec 2006
Pagination or Media Count : 190
Abstract : The goal of the Defense Advanced Research Projects Agency (DARPA) Advanced Lithography research program was to revolutionize semiconductor lithography through accelerated research of highly innovative approaches that would enable pattern transfer to wafers of features 100 nm and below. To this end, DARPA, via a Broad Agency Announcement, BAA 00-04, solicited proposals for R&D to understand and overcome specific technological obstacles to the realization of lithography for critical dimensions of 100 nm and smaller and the supporting technologies relevant to more than one lithography technology option. In response, Sanders, A Lockheed Martin Company, proposed Device Demonstrations Using Point Source X-ray Lithography Technology to enhance and utilize a previously developed X-ray lithography system to address next-generation sub-100 nm lithography demonstrations using point source X- ray Lithography. This program started in December 2001 and was eventually taken over by BAE Systems, Inc. after their acquisition of Sanders. Summarized in this Final Report are the highlights and current status of this effort.
Descriptors : *X RAY LITHOGRAPHY , GALLIUM ARSENIDES , INTEGRATED CIRCUITS , MICROELECTRONICS , COLLIMATORS
Subject Categories : Electrical and Electronic Equipment
Printing and Graphic Arts
Distribution Statement : APPROVED FOR PUBLIC RELEASE