Accession Number : ADA350195
Title : Infrared Applications of Semiconductors II: Symposium Held in Boston, Massachusetts on December 1-4, 1997
Descriptive Note : Final rept. 15 Oct 97-14 Oct 98
Corporate Author : MATERIALS RESEARCH SOCIETY WARRENDALE PA
Personal Author(s) : Pachavis, ; McDaniel, Donald L. ; Manasreh, M. O. ; Miles, Richard H. ; Sivananthan, Sivalingam
Report Date : DEC 1997
Pagination or Media Count : 679
Abstract : A variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts (e.g., PbSnTe) have been commercially available for sometime. Mid-infrared emitting III-V semiconductors (e.g., InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these material offer higher powers, of particular interest are the III-V semiconductor laser based on type-II superlattices (e.g., InAs/GaInSb). Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption-all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.
Descriptors : *SEMICONDUCTOR LASERS , *SEMICONDUCTORS , *INFRARED RESEARCH , HIGH POWER , EMISSION , SYMPOSIA , SUPERLATTICES , HOLES(ELECTRON DEFICIENCIES) , REDUCTION , VALENCE BANDS , THERMAL CONDUCTIVITY , TELLURIDES , GROUP III COMPOUNDS , GROUP IV COMPOUNDS , GROUP V COMPOUNDS , TIN , LEAD COMPOUNDS , ABSORPTION , SALTS , INDIUM , INFRARED OPTICAL MATERIALS , INTERMEDIATE INFRARED RADIATION , MASSACHUSETTS , GALLIUM ARSENIDE LASERS , AUGER ELECTRONS , DIODE LASERS.
Subject Categories : INORGANIC CHEMISTRY
LASERS AND MASERS
Distribution Statement : APPROVED FOR PUBLIC RELEASE