Accession Number : ADA349485
Title : International Conference on Defects in Semiconductors (19th), ICDS-19, Held in Aveiro, Portugal on 21-25 July 1997, Part 1
Corporate Author : AVEIRO UNIV (PORTUGAL)
Personal Author(s) : Davies, Gordon ; Nazare, Maria H.
Report Date : 23 JAN 1998
Pagination or Media Count : 708
Abstract : The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps. semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics will also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in Epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.
Descriptors : *SEMICONDUCTORS , *DEFECTS(MATERIALS) , SYMPOSIA , OPTIMIZATION , DETECTORS , COMPOSITE MATERIALS , QUANTUM THEORY , EPITAXIAL GROWTH , SILICON , BROADBAND , GROUP III COMPOUNDS , GROUP IV COMPOUNDS , GROUP V COMPOUNDS , RARE EARTH ELEMENTS , METASTABLE STATE , RADIATION EFFECTS , SELF ORGANIZING SYSTEMS , GALLIUM NITRIDES.
Subject Categories : LAMINATES AND COMPOSITE MATERIALS
Distribution Statement : APPROVED FOR PUBLIC RELEASE