Accession Number : ADA335326


Title :   International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.


Descriptive Note : Final rept.


Corporate Author : INSTITUTE OF ELECTRICAL AND ELECTRONICSENGINEERS INC PISCATAWAY NJ


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a335326.pdf


Report Date : 14 JAN 1998


Pagination or Media Count : 695


Abstract : Partial contents: Plenary Session - PLEN1 InP-Based Components for Telecom Systems in Europe; PLEN2 Advanced in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing; PLEN3 Unipolar Mid-Infrared Semiconductor Lasers; MA: Power Devices - MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor; MA2 0.9W/mm, 76% PAE (7GHz) GaInAs/InP Composite Channel HEMTS; MA3 High Power InAlAs/InGaAs/InP-HFET Grown by MOVPE; MA4 InP/InGaAs Double HBTs with High CW Power Density at 10 GHz.


Descriptors :   *INDIUM PHOSPHIDES , SIGNAL PROCESSING , SYMPOSIA , ELECTROOPTICS , GALLIUM ARSENIDES , HETEROJUNCTIONS , ELECTRONIC EQUIPMENT , SEMICONDUCTOR LASERS , EPITAXIAL GROWTH , INTEGRATED CIRCUITS , OPTICAL COMMUNICATIONS , ARSENIDES , POWER , ALUMINUM ARSENIDES , INDIUM , CHANNELS , GALLIUM COMPOUNDS , BIPOLAR TRANSISTORS , HIGH ELECTRON MOBILITY TRANSISTORS.


Subject Categories : INORGANIC CHEMISTRY
      LASERS AND MASERS
      ELECTROOPTICAL AND OPTOELECTRONIC DEVICES
      LAMINATES AND COMPOSITE MATERIALS


Distribution Statement : APPROVED FOR PUBLIC RELEASE