Accession Number : ADA288690


Title :   Materials Research Society Symposium Proceedings on Diamond, SiC and Nitride Wide Bandgap Semiconductors Held at San Francisco, California on 4-8 April 1994. Volume 339.


Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA


Personal Author(s) : Carter, Calvin H., Jr. ; Gildenblat, Gennady ; Nakamura, Shuji ; Nemanich, Robert J.


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a288690.pdf


Report Date : 08 APR 1994


Pagination or Media Count : 754


Abstract : This symposium was directed toward the potential of diamond, SiC and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials.Both experimental and theoretical studies were presented.Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/uv light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make exciting new applications, and that we are just beginning to understand the potential of the materials.


Descriptors :   *COMPOSITE MATERIALS , *DIAMONDS , *SEMICONDUCTORS , *BROADBAND , *SILICON CARBIDES , *NITRIDES , EXPERIMENTAL DATA , SYMPOSIA , DETECTORS , INTERFACES , GROWTH(GENERAL) , LIGHT , ELECTRONIC EQUIPMENT , ENERGY GAPS , IMPURITIES , SURFACES , ELECTRONS , DEFECTS(MATERIALS) , DOPING , EMITTERS.


Subject Categories : INORGANIC CHEMISTRY
      SOLID STATE PHYSICS


Distribution Statement : APPROVED FOR PUBLIC RELEASE