Accession Number : ADA288690
Title : Materials Research Society Symposium Proceedings on Diamond, SiC and Nitride Wide Bandgap Semiconductors Held at San Francisco, California on 4-8 April 1994. Volume 339.
Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA
Personal Author(s) : Carter, Calvin H., Jr. ; Gildenblat, Gennady ; Nakamura, Shuji ; Nemanich, Robert J.
Report Date : 08 APR 1994
Pagination or Media Count : 754
Abstract : This symposium was directed toward the potential of diamond, SiC and nitride wide bandgap semiconductors. The symposium emphasized materials issues related to the semiconducting properties of these wide bandgap materials.Both experimental and theoretical studies were presented.Solid advances were reported in the growth techniques of all three materials groups. Contributions demonstrated the critical importance of surfaces, interfaces, doping, defects, and impurities Reports demonstrated potential device applications ranging from unique electronic devices to blue/uv light emitters/detectors and even novel structures employing a negative electron affinity. The overall theme of the symposium was that materials research into wide bandgap semiconductors will make exciting new applications, and that we are just beginning to understand the potential of the materials.
Descriptors : *COMPOSITE MATERIALS , *DIAMONDS , *SEMICONDUCTORS , *BROADBAND , *SILICON CARBIDES , *NITRIDES , EXPERIMENTAL DATA , SYMPOSIA , DETECTORS , INTERFACES , GROWTH(GENERAL) , LIGHT , ELECTRONIC EQUIPMENT , ENERGY GAPS , IMPURITIES , SURFACES , ELECTRONS , DEFECTS(MATERIALS) , DOPING , EMITTERS.
Subject Categories : INORGANIC CHEMISTRY
SOLID STATE PHYSICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE