Accession Number : ADA285581


Title :   Investigation of Single Events Upsets in Silicon and GaAs Structures Using Reaction Calculations


Descriptive Note : Technical rept. 1 Oct 1988-10 Mar 1992


Corporate Author : CLEMSON UNIV SC KINARD LAB OF PHYSICS


Personal Author(s) : McNulty, Peter J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a285581.pdf


Report Date : 01 Sep 1994


Pagination or Media Count : 336


Abstract : Two procedures were developed to obtain the dimensions of the sensitive volume: one using charge collection measurements and the other proton Seu cross sections measured at different energies and angles of incidence. The CUPID simulation codes play an important role. They have been made user friendly and received adequate documentation. The methodology has been extended to single event latch-up and displacement damage. Energy deposition, CUPID, Charge collection, Sensitive volume, Single event upsets, Spallation reactions, Displacement damage, Single event latch-up and displacement damage.


Descriptors :   *PROTONS , *MICROELECTRONICS , *RADIATION EFFECTS , *NUCLEAR PHYSICS , COMPUTER PROGRAMS , SIMULATION , ANGLES , IONS , MEASUREMENT , DAMAGE , SILICON , JUNCTION DIODES , NUCLEAR REACTIONS , CHARGE COUPLED DEVICES , SPALLATION , NEUTRONS , USER FRIENDLY , CROSS SECTIONS , DEPOSITION , GALLIUM ARSENIDES , DISPLACEMENT , ENERGY , FIELD EFFECT TRANSISTORS , SEMICONDUCTORS


Subject Categories : Electrical and Electronic Equipment
      Electromagnetic Shielding
      Nuclear Physics & Elementary Particle Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE